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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 DESCRIPTION *With TO-220Fa package *DARLINGTON *Complement to type 2SB1342 *High DC current gain APPLICATIONS *Low frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 4 6 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50A; IE=0 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA 1.5 V A ICBO Collector cut-off current VCB=80V; IE=0 100 IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V 1000 10000 fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1933 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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